 | The NHE312 is a high-sensitivity indium antimonide (InSb) thin-film Hall element, specifically designed for precise sensing applications in low magnetic fields. Its core advantage lies in high sensitivity: under the conditions of 1V constant voltage drive and 50mT magnetic field, the output voltage VH ranges from 196~428mV, enabling accurate capture of weak magnetic field changes. Meanwhile, the zero-magnetic-field offset voltage is only ±7mV, ensuring high signal purity without the need for complex compensation circuits. The NHE312 features an input and output resistance of 240~550Ω, perfectly compatible with transistor circuits. It supports 1V constant voltage or 1mA constant current drive, with a maximum input current of 20mA (at 25℃) and strong adaptability. Encased in a Sip-type 4-pin package, it offers easy soldering and vibration resistance. The operating temperature range is -40℃~110℃, and the storage temperature range is -40℃~125℃, making it suitable for harsh environments such as industrial and automotive applications, with a stable temperature drift coefficient (VH temperature coefficient: -1.8%/℃). In addition, the NHE312 is available in a lead-free version and the NHE312-HF lead-free and halogen-free version, complying with environmental standards. It is classified into 4~9 grades (168~428mV) based on output voltage, allowing selection according to specific requirements. The packaging options are 1000 units/bag and 30000 units/carton, adapting to mass production. It is widely used in brushless motors, position/rotation sensors, current sensors, and various low-magnetic-field flux detection scenarios. |