Gallium Arsenide Hall Element
Brand: Juzhen (Matrix)
Maximum Input Current: 14mA
Operating Temperature: -40~+125°C
Input Resistance: 1250Ω
Overall Dimension: 2.51.50.6 (unit not specified, typically mm for such components)
Sensitivity: ~90mV @ 5mA @ 50mT
Package: SSOT-4
Applications: Displacement monitoring (consumer electronics), displacement sensors (camera modules)
Product Description

Chip Overview

JM8630 is a gallium arsenide (GaAs) Hall element with high linearity and excellent temperature characteristics, which can replace Asahi Kasei's HG-166A. The gallium arsenide (GaAs) material features high sensitivity, over eight times that of silicon (Si) material. Additionally, its sensitivity exhibits minimal variation with temperature, ranging from 0.03% to 0.05% per degree. It is mainly used in linear sensing applications and can also be applied in high-end switch sensing applications.
The gallium arsenide (GaAs) Hall element boasts outstanding properties such as high sensitivity, extremely low temperature drift coefficient, a magnetic field linear dynamic range of up to 2T, and zero hysteresis. It comes in a thin SSOT-4 package, making it highly suitable for current and displacement sensing applications. It is a typical application in displacement monitoring for consumer electronics, such as displacement sensing in camera modules. It is packaged in a tape and reel format, with 4,000 units per reel.






外形尺寸图 Dimensional Drawing (Unit: mm):

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Chip Applications

  • Displacement Monitoring (Consumer Electronics)

  • Displacement Sensor (Camera Module)



Product Features
  1. Gallium Arsenide (GaAs) Hall Element with High Linearity and Excellent Temperature Characteristics

  2. Maximum Input Current: 14mA

  3. Operating Temperature: -40 ~ +125℃

  4. Input Resistance: 1250Ω

  5. Outline Dimensions: 2.51.50.6 (mm, default unit for such chip dimensions)

  6. Sensitivity: ~90mV @ 5mA @ 50mT

  7. Package: SSOT-4


Application Scenarios
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